Observation of electronic states on Si(111)-(7 x 7) through short-range attractive force with noncontact atomic force spectroscopy.

نویسندگان

  • T Arai
  • M Tomitori
چکیده

We experimentally reveal that the short-range attractive force between a Si tip and a Si(111)-(7 x 7) surface is enhanced at specified bias voltages; we conduct force spectroscopy based on noncontact atomic force microscopy with changing bias voltage at a fixed separation. The spectra exhibit prominent peaks and a broad peak, which are attributed to quantum mechanical resonance as the energy levels of sample surface states are tuned to those of the tip states by shifting the Fermi level through changing bias voltage, and to the resonating states over a lowered tunneling barrier, respectively.

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Observation of Electronic States on Si(111)- 7 7 through Short-Range Attractive Force with Noncontact Atomic Force Spectroscopy

*KURAに登録されているコンテンツの利用については,著作権法に規定されている私的使用や引用などの範囲内で行ってください。 *著作権法に規定されている私的使用や引用などの範囲を超える利用を行う場合には,著作権者の許諾を得てください。ただし,著作権者 から著作権等管理事業者(学術著作権協会,日本著作出版権管理システムなど)に権利委託されているコンテンツの利用手続については ,各著作権等管理事業者に確認してください。 Title Observation of Electronic States on Si(111)-7x7 through Short-Range Attractive Force with Noncontact Atomic Force Spectroscopy Author(s) Arai, Toyoko; Tomitori, M. Citation Physical ...

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عنوان ژورنال:
  • Physical review letters

دوره 93 25  شماره 

صفحات  -

تاریخ انتشار 2004